Invention Grant
- Patent Title: Semiconductor memory device including stacked chips and memory module having the same
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Application No.: US15693707Application Date: 2017-09-01
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Publication No.: US10229900B2Publication Date: 2019-03-12
- Inventor: Jong-Wan Kim , Sung-Chul Park , Won-Il Bae
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2016-0164946 20161206
- Main IPC: G11C5/02
- IPC: G11C5/02 ; H01L25/18 ; H01L25/065 ; G11C7/10 ; G11C5/04 ; G11C5/06

Abstract:
A semiconductor memory device includes a memory structure including a first integrated circuit chip and a plurality of second integrated circuit chips stacked on each other, the first integrated circuit chip is interposed between a pair of the plurality of second integrated circuit chips, an interface unit disposed on the first integrated circuit chip, the memory structure is connected to a third circuit through the interface unit, and the interface unit transfers operation signals to the first integrated circuit chip and the plurality of second integrated circuit chips, at least one inter-chip interconnector connected with the interface unit and the first integrated circuit chip and the plurality of second integrated circuit chips, and an external interconnector connected with the interface unit and the third circuit.
Public/Granted literature
- US20180158809A1 SEMICONDUCTOR MEMORY DEVICE INCLUDING STACKED CHIPS AND MEMORY MODULE HAVING THE SAME Public/Granted day:2018-06-07
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