Invention Grant
- Patent Title: High-density MIM capacitors
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Application No.: US15639585Application Date: 2017-06-30
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Publication No.: US10229967B2Publication Date: 2019-03-12
- Inventor: Benjamin D. Briggs , Lawrence A. Clevenger , Bartlet H. Deprospo , Huai Huang , Christopher J. Penny , Michael Rizzolo
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L23/522

Abstract:
Capacitors and methods of forming the same include forming a gap in a dielectric layer underneath one or more conducting lines, such that the one or more conducting lines are suspended over the gap. A capacitor stack is deposited in the gap and on the conducting lines. Respective contacts are deposited on the conducting lines and on the capacitor stack.
Public/Granted literature
- US20170301749A1 HIGH-DENSITY MIM CAPACITORS Public/Granted day:2017-10-19
Information query
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