A method for fabricating an advanced metal insulator metal capacitor structure includes providing a pattern in a dielectric layer. The pattern includes a set of features in the dielectric layer. A first metal layer is deposited in the set of features in the dielectric layer. A phase change material layer is deposited over the metal layer in the set of features in the dielectric layer. The phase change material is an insulator in a deposited state. A surface treatment process is performed on the phase change layer to produce a top surface layer having electrically conductive properties. A second metal layer is deposited on the top surface layer of the phase change layer.