Invention Grant
- Patent Title: Power semiconductor device
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Application No.: US15569636Application Date: 2016-05-16
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Publication No.: US10229969B2Publication Date: 2019-03-12
- Inventor: Yasuhiro Kagawa , Rina Tanaka , Yutaka Fukui , Katsutoshi Sugawara
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Chiyoda-ku
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Chiyoda-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2015-116700 20150609
- International Application: PCT/JP2016/064473 WO 20160516
- International Announcement: WO2016/199546 WO 20161215
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/78 ; H01L29/739 ; H01L29/10 ; H01L21/04 ; H01L29/66 ; H01L29/16 ; H01L29/20

Abstract:
A protective diffusion region includes a first protective diffusion region at a location closest to a termination region, and a second protective diffusion region located away from the first protective diffusion region with a first space therebetween. A second space that is a distance between a termination diffusion region and the first protective diffusion region is greater than the first space. A current diffusion layer of a first conductivity type includes a first current diffusion layer located between the first protective diffusion region and the second protective diffusion region and having a higher impurity concentration than a drift layer, and a second current diffusion layer located between the first protective diffusion region and the termination diffusion region. The second current diffusion layer includes a region having a lower impurity concentration than the current diffusion layer.
Public/Granted literature
- US20180358431A1 POWER SEMICONDUCTOR DEVICE Public/Granted day:2018-12-13
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