Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15724018Application Date: 2017-10-03
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Publication No.: US10229980B2Publication Date: 2019-03-12
- Inventor: Tomoko Yonekura
- Applicant: LAPIS SEMICONDUCTOR CO., LTD.
- Applicant Address: JP Yokohama
- Assignee: LAPIS SEMICONDUCTOR CO., LTD.
- Current Assignee: LAPIS SEMICONDUCTOR CO., LTD.
- Current Assignee Address: JP Yokohama
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: JP2016-196234 20161004
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L29/423 ; H01L23/31 ; H01L29/739 ; H01L29/78 ; H01L23/00 ; H01L29/40 ; H01L29/417 ; H01L29/06

Abstract:
A semiconductor device including a semiconductor substrate; a conductive film covering a front face of the semiconductor substrate, a front face of the conductive film having plural straight-line shaped concave portions disposed in parallel to each other; and a protecting film covering the front face of the conductive film, the protecting film having an opening that has an edge forming an angle with the plural concave portions of greater than 0° and less than 90°, and that partially exposes the conductive film.
Public/Granted literature
- US20180097080A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-04-05
Information query
IPC分类: