Invention Grant
- Patent Title: Strained stacked nanowire field-effect transistors (FETs)
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Application No.: US15583283Application Date: 2017-05-01
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Publication No.: US10229996B2Publication Date: 2019-03-12
- Inventor: Karthik Balakrishnan , Kangguo Cheng , Pouya Hashemi , Alexander Reznicek
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Ryan, Mason & Lewis, LLP
- Agent L. Jeffrey Kelly
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/06 ; H01L29/78 ; H01L29/40 ; H01L29/02 ; H01L21/02 ; H01L21/311 ; H01L29/10 ; H01L29/423 ; H01L29/786 ; B82Y10/00 ; H01L29/775

Abstract:
A method for manufacturing a semiconductor device comprises epitaxially growing a plurality of silicon layers and compressively strained silicon germanium (SiGe) layers on a substrate in a stacked configuration, wherein the silicon layers and compressively strained SiGe layers are alternately stacked on each other starting with a silicon layer on a bottom of the stacked configuration, patterning the stacked configuration to a first width, selectively removing a portion of each of the silicon layers in the stacked configuration to reduce the silicon layers to a second width less than the first width, forming an oxide layer on the compressively strained SiGe layers of the stacked configuration, wherein forming the oxide layer comprises fully oxidizing the silicon layers so that portions of the oxide layer are formed in place of each fully oxidized silicon layer, and removing part of the oxide layer while maintaining at least part of the portions of the oxide layer formed in place of each fully oxidized silicon layer, wherein the compressively strained SiGe layers are anchored to one another and a compressive strain is maintained in each of the compressively strained SiGe layers.
Public/Granted literature
- US20170236937A1 STRAINED STACKED NANOWIRE FIELD-EFFECT TRANSISTORS (FETs) Public/Granted day:2017-08-17
Information query
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