Invention Grant
- Patent Title: Temperature grading for band gap engineering of photovoltaic devices
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Application No.: US14697250Application Date: 2015-04-27
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Publication No.: US10230015B2Publication Date: 2019-03-12
- Inventor: Ahmed Abou-Kandil , Keith E. Fogel , Augustin J. Hong , Jeehwan Kim , Mohamed Saad , Devendra K. Sadana
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Erik Johnson
- Main IPC: H01L31/044
- IPC: H01L31/044 ; H01L31/075 ; H01L27/146 ; H01L31/20 ; H01L31/0224 ; H01L31/0288
Abstract:
A photovoltaic device includes a p-type layer. An intrinsic layer is formed directly on the p-type layer and includes an interface region extending into the intrinsic layer that includes a gradually decreasing band gap energy going from the p-type layer into the intrinsic layer formed by a graded deposition temperature. An n-type layer is formed directly on the intrinsic layer.
Public/Granted literature
- US20150228833A1 TEMPERATURE GRADING FOR BAND GAP ENGINEERING OF PHOTOVOLTAIC DEVICES Public/Granted day:2015-08-13
Information query
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