Invention Grant
- Patent Title: Light emitting device with asymmetrical radiation pattern and manufacturing method of the same
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Application No.: US15416921Application Date: 2017-01-26
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Publication No.: US10230030B2Publication Date: 2019-03-12
- Inventor: Chieh Chen , Tsung-Hsi Wang
- Applicant: MAVEN OPTRONICS CO., LTD.
- Applicant Address: TW Hsinchu County
- Assignee: MAVEN OPTRONICS CO., LTD.
- Current Assignee: MAVEN OPTRONICS CO., LTD.
- Current Assignee Address: TW Hsinchu County
- Agency: Foley & Lardner LLP
- Agent Cliff Z. Liu
- Priority: TW105102658A 20160128; CN201610075824 20160203
- Main IPC: H01L33/60
- IPC: H01L33/60 ; H01L33/48 ; H01L33/50 ; H01L33/46 ; H01L33/56

Abstract:
A monochromatic chip-scale packaging (CSP) light emitting diode (LED) device with an asymmetrical radiation pattern, including a flip-chip LED semiconductor die, and a reflective structure, is disclosed. A white-light broad-spectrum CSP LED device with asymmetrical radiation pattern is also disclosed by further including a photoluminescent structure in the CSP LED device. The photoluminescent structure covers at least the upper surface of the LED semiconductor die. The reflective structure adjacent to the LED semiconductor die and the photoluminescent structure reflects at least partial light beam emitted from the edge surface of the LED semiconductor die or the edge surface of the photoluminescent structure, therefore shaping the radiation pattern asymmetrically. A method to fabricate the aforementioned CSP LED device is also disclosed. Without using additional optical lens, the CSP LED device is suitable for the applications requiring asymmetrical illuminations, while keeping the advantage of its compact form factor.
Public/Granted literature
- US20170222107A1 LIGHT EMITTING DEVICE WITH ASYMMETRICAL RADIATION PATTERN AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2017-08-03
Information query
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