Invention Grant
- Patent Title: Method and apparatus of dead time tuning in an inverter
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Application No.: US15459003Application Date: 2017-03-15
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Publication No.: US10230311B2Publication Date: 2019-03-12
- Inventor: Ziang Chen , Jun Chen , Hang Sang Lee
- Applicant: Hong Kong Applied Science and Technology Research Institute Co. Ltd.
- Applicant Address: CN Hong Kong
- Assignee: Hong Kong Applied Science and Technology Research Institute Co. Ltd.
- Current Assignee: Hong Kong Applied Science and Technology Research Institute Co. Ltd.
- Current Assignee Address: CN Hong Kong
- Agency: Eagle IP Limited
- Agent Jacqueline C. Lui
- Main IPC: H02M7/537
- IPC: H02M7/537 ; H02M1/32 ; G01K7/22

Abstract:
A method prevents shoot-through currents and reduces body-diode conduction time in an inverter circuit by changing dead times for transistors in the inverter circuit. A sensing resistor senses temperatures of transistors in the inverter circuit. A delay generator changes delay times in response to receiving the temperatures of the transistors from the sensing resistor. A dead time generation unit changes the dead times for the transistors in response to changes in the delay times.
Public/Granted literature
- US20180269806A1 Method and apparatus of dead time tuning in an inverter Public/Granted day:2018-09-20
Information query
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