A plasma processing apparatus includes a first electrode, a second electrode disposed to face the first electrode, a chamber, a first high-frequency power supply, a direct-current power supply, and a gas supply source. The plasma processing apparatus generates first plasma to form a film of a reaction product on the second electrode by causing the first high-frequency power supply to supply first high-frequency power to the second electrode and causing the gas supply source to supply a first gas into the chamber; and generates second plasma to sputter the film of the reaction product by causing the first high-frequency power supply to supply the first high-frequency power to the second electrode, causing the direct-current power supply to supply direct-current power to the second electrode, and causing the gas supply source to supply a second gas into the chamber.