Invention Grant
- Patent Title: AC current write-assist in orthogonal STT-MRAM
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Application No.: US15859030Application Date: 2017-12-29
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Publication No.: US10236048B1Publication Date: 2019-03-19
- Inventor: Michail Tzoufras , Marcin Jan Gajek , Kadriye Deniz Bozdag , Mourad El Baraji
- Applicant: Spin Memory, Inc.
- Applicant Address: US CA Fremont
- Assignee: Spin Memory, Inc.
- Current Assignee: Spin Memory, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Arnold & Porter Kaye Scholer
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16 ; H01L43/02 ; H01L43/08 ; H01F10/32 ; H01L27/22 ; H01L43/10
Abstract:
Methods and structures useful for magnetoresistive random-access memory (MRAM) are disclosed. The MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device utilizes an in-plane polarization magnetic layer and a perpendicular MTJ in conjugation with a programming current pulse that comprises an alternating perturbation frequency.
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