Invention Grant
- Patent Title: Sensing amplifier comprising bias circuitry coupled to bit line and dummy bitline for performing read operation in flash memory devices
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Application No.: US15873872Application Date: 2018-01-17
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Publication No.: US10236068B2Publication Date: 2019-03-19
- Inventor: Hieu Van Tran , Anh Ly , Thuan Vu
- Applicant: Silicon Storage Technology, Inc.
- Applicant Address: US CA San Jose
- Assignee: SILICON STORAGE TECHNOLOGY, INC.
- Current Assignee: SILICON STORAGE TECHNOLOGY, INC.
- Current Assignee Address: US CA San Jose
- Agency: DLA Piper LLP US
- Main IPC: G11C16/28
- IPC: G11C16/28 ; G11C16/14 ; G11C16/24 ; G11C7/06 ; G11C16/04
Abstract:
The present invention relates to an improved sensing amplifier and related method for use in read operations in flash memory devices. In one embodiment, a voltage offset is induced in the sensing amplifier through the use of capacitors.
Public/Granted literature
- US20180144804A1 Sensing Amplifier Comprising Voltage Offset Circuitry For Use In Flash Memory Devices Public/Granted day:2018-05-24
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