Invention Grant
- Patent Title: Predicting tunnel barrier endurance using redundant memory structures
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Application No.: US15851593Application Date: 2017-12-21
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Publication No.: US10236075B1Publication Date: 2019-03-19
- Inventor: Kuk-Hwan Kim , Peter Cuevas , Benjamin Louie , Amitay Levi
- Applicant: Spin Transfer Technologies, Inc.
- Applicant Address: US CA Fremont
- Assignee: SPIN MEMORY, INC.
- Current Assignee: SPIN MEMORY, INC.
- Current Assignee Address: US CA Fremont
- Agency: Zilka-Kotab, P.C.
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C29/08 ; G11C11/16 ; G11C29/00 ; H01L43/08 ; H01L27/22

Abstract:
A processor-implemented method, according to one embodiment, includes: activating a subset of a plurality of p-MTJ cells oriented in one or more columns of a MRAM array. Activating the subset of p-MTJ cells includes: applying a first voltage to a gate terminal of the transistor in each of the p-MTJ cells in parallel, applying a second voltage to a first end of the MTJ sensor in each of the p-MTJ cells in parallel, and applying a third voltage to a drain terminal of the transistor in each of the p-MTJ cells in parallel. The processor-implemented method also includes: monitoring the activated subset of p-MTJ cells, determining whether any of the activated p-MTJ cells have failed, and in response to determining that an activated p-MTJ cell has failed, physically locating the failed p-MTJ cell. Other systems, methods, and computer program products are described in additional embodiments.
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