Invention Grant
- Patent Title: Method of etching porous film
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Application No.: US15826059Application Date: 2017-11-29
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Publication No.: US10236162B2Publication Date: 2019-03-19
- Inventor: Shigeru Tahara , Eiichi Nishimura , Mikhail Baklanov , Liping Zhang , Jean-Francois de Marneffe
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2015-085878 20150420
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01J37/32
Abstract:
A method of etching a porous film is provided. The method includes supplying a first gas into a processing chamber of a plasma processing apparatus in which an object to be processed including a porous film is accommodated, and generating a plasma of a second gas for etching the porous film in the processing chamber. The first gas is a processing gas having a saturated vapor pressure of less than or equal to 133.3 Pa at a temperature of a stage on which the object is mounted in the processing chamber, or includes the processing gas. In the step of supplying the first gas, no plasma is generated, and a partial pressure of the processing gas which is supplied into the processing chamber is set to be greater than or equal to 20% of the saturated vapor pressure.
Public/Granted literature
- US20180082823A1 METHOD OF ETCHING POROUS FILM Public/Granted day:2018-03-22
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