Invention Grant
- Patent Title: Stacked field-effect transistors (FETs) with shared and non-shared gates
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Application No.: US15802062Application Date: 2017-11-02
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Publication No.: US10236217B1Publication Date: 2019-03-19
- Inventor: Takashi Ando , Pouya Hashemi , Choonghyun Lee , Alexander Reznicek , Jingyun Zhang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Ryan, Mason & Lewis, LLP
- Agent L. Jeffrey Kelly
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L27/092 ; H01L29/78 ; H01L29/40 ; H01L29/66 ; H01L29/06 ; H01L21/306 ; H01L21/3065 ; H01L21/311
Abstract:
A semiconductor device includes a plurality of stacked gate regions spaced apart from each other on a substrate, a plurality of first epitaxial source/drain regions between the plurality of stacked gate regions, wherein the first epitaxial source/drain regions extend from sides of the plurality of stacked gate regions in a first doped region, a plurality of second epitaxial source/drain regions between the plurality of stacked gate regions and positioned over the first epitaxial source/drain regions, wherein the second epitaxial source/drain regions extend from sides of the plurality of stacked gate regions in a second doped region, and a contact region extending through a second epitaxial source/drain region of the plurality of second epitaxial source/drain regions to a first epitaxial source/drain region of the plurality of first epitaxial source/drain regions.
Information query
IPC分类:
