A semiconductor memory device includes first and second insulating plates, a stacked body provided between the first insulating plate and the second insulating plate, and a semiconductor member. The stacked body includes interconnect layers. The interconnect layer includes a first interconnect portion contacting the first insulating plate, a second interconnect portion contacting the second insulating plate, a third interconnect portion, a fourth interconnect portion, fifth and sixth interconnect portions are separated from the first and the second insulating plates. The fifth interconnect portion is connected to the first interconnect portion via the third interconnect portion, and is insulated from the second interconnect portion. The sixth interconnect portion is connected to the second interconnect portion via the fourth interconnect portion, and is insulated from the first interconnect portion. The semiconductor member is disposed between the fifth interconnect portion and the sixth interconnect portion.