Invention Grant
- Patent Title: Semiconductor integrated circuit device having a first cell row and a second cell row
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Application No.: US15908356Application Date: 2018-02-28
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Publication No.: US10236283B2Publication Date: 2019-03-19
- Inventor: Hiroyuki Shimbo
- Applicant: SOCIONEXT INC.
- Applicant Address: JP Kanagawa
- Assignee: SOCIONEXT INC.
- Current Assignee: SOCIONEXT INC.
- Current Assignee Address: JP Kanagawa
- Agency: McDermott Will & Emery LLP
- Priority: JP2013-177182 20130828
- Main IPC: H01L27/118
- IPC: H01L27/118 ; H01L27/02 ; H01L23/528 ; H01L29/66 ; H01L21/8238 ; H01L27/092 ; H01L27/12 ; H01L27/088

Abstract:
Disclosed herein is a semiconductor integrated circuit device which includes a standard cell with a plurality of fins extending in a first direction and arranged in a second direction that is perpendicular to the first direction. An active fin of the fins forms part of an active transistor. A dummy fin of the fins is disposed between the active fin and an end of the standard cell.
Public/Granted literature
- US20180190640A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2018-07-05
Information query
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