Invention Grant
- Patent Title: Single poly non-volatile memory device, method of manufacturing the same and single poly non-volatile memory device array
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Application No.: US15402259Application Date: 2017-01-10
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Publication No.: US10236297B2Publication Date: 2019-03-19
- Inventor: Su Jin Kim , Hye Jin Yoo
- Applicant: MagnaChip Semiconductor, Ltd.
- Applicant Address: KR Cheongju-si
- Assignee: MagnaChip Semiconductor, Ltd.
- Current Assignee: MagnaChip Semiconductor, Ltd.
- Current Assignee Address: KR Cheongju-si
- Agency: NSIP Law
- Priority: KR10-2016-0005621 20160115
- Main IPC: G11C16/10
- IPC: G11C16/10 ; H01L27/11558 ; H01L29/10 ; H01L27/11524 ; H01L29/788 ; H01L29/08 ; G11C16/04 ; G11C16/14 ; H01L29/66
Abstract:
A single poly non-volatile memory device that includes: a first type lower well; first and second wells separately formed in an upper portion of the first type lower well; a source electrode, a selection transistor, a sensing transistor, and a drain electrode sequentially disposed in an upper portion of the first well. A control gate is formed in an upper portion of the second well with separated on an opposite side of the source electrode from the first well and connected to the gate of the sensing transistor.
Public/Granted literature
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