Invention Grant
- Patent Title: Solid-state imaging element and electronic device to improve quality of an image
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Application No.: US15518483Application Date: 2015-10-07
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Publication No.: US10236311B2Publication Date: 2019-03-19
- Inventor: Ryoji Suzuki , Hitoshi Moriya , Atsuhiro Ando , Atsushi Masagaki
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: Chip Law Group
- Priority: JP2014-213767 20141020
- International Application: PCT/JP2015/078495 WO 20151007
- International Announcement: WO2016/063727 WO 20160428
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L27/146 ; H01L31/0224 ; H04N5/369 ; H01L31/102 ; H04N5/378 ; H04N5/232 ; H04N5/374 ; H04N9/04 ; H01L27/148

Abstract:
The present technology relates to a solid-state imaging element and an electronic device capable of improving image quality of the solid-state imaging element. The solid-state imaging element includes a photoelectric conversion unit adapted to photoelectrically convert incident light incident from a predetermined incident surface. Also, the solid-state imaging element includes a wire arranged on a bottom surface side that is an opposite surface of the incident surface of the photoelectric conversion unit, and formed with a protruding pattern on a surface facing the photoelectric conversion unit. The present technology can be applied to, for example, a solid-state imaging element such as a CMOS image sensor, and an electronic device including the solid-state imaging element.
Public/Granted literature
- US20170229503A1 SOLID-STATE IMAGING ELEMENT AND ELECTRONIC DEVICE Public/Granted day:2017-08-10
Information query
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