Invention Grant
- Patent Title: Termination implant enrichment for shielded gate MOSFETs
-
Application No.: US15581774Application Date: 2017-04-28
-
Publication No.: US10236340B2Publication Date: 2019-03-19
- Inventor: Joseph Yedinak , Xiaoli Wu
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: Semiconductor Components Industries, LLC
- Current Assignee: Semiconductor Components Industries, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Brake Hughes Bellermann LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/423 ; H01L29/66 ; H01L29/10
Abstract:
In a general aspect, a power semiconductor device can include a first trench shield electrode and a second trench shield electrode defined in a semiconductor region, the first and second trench shield electrodes each having a first portion disposed in an active region and a second portion disposed in a termination region. A trench of the first trench shield electrode and a trench of the second trench shield electrode can define a mesa of the semiconductor region therebetween. The device can further include an implant enrichment region disposed in the termination region, the implant enrichment region can be intersected by the first trench shield electrode and the second trench shield electrode, and can have a portion disposed in the mesa of the semiconductor region, the portion extending from the trench of the first trench shield electrode to the trench of the second trench shield electrode.
Public/Granted literature
- US20180315812A1 TERMINATION IMPLANT ENRICHMENT FOR SHIELDED GATE MOSFETS Public/Granted day:2018-11-01
Information query
IPC分类:
