Invention Grant
- Patent Title: Power semiconductor device trench having field plate and gate electrode
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Application No.: US15490267Application Date: 2017-04-18
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Publication No.: US10236351B2Publication Date: 2019-03-19
- Inventor: Thomas Feil , Michael Hutzler
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102016107203 20160419
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/8238 ; H01L29/40 ; H01L29/423 ; H01L29/66 ; H01L29/78
Abstract:
A method of processing a power semiconductor device includes: providing a semiconductor body with a trench extending into the semiconductor body along an extension direction and including an insulator; providing a monolithic electrode zone within the trench; and removing a section of the monolithic electrode zone within the trench to divide the monolithic electrode zone into at least a first electrode structure and a second electrode structure arranged separately and electrically insulated from each other.
Public/Granted literature
- US20170301763A1 Power Semiconductor Device Trench Having Field Plate and Gate Electrode Public/Granted day:2017-10-19
Information query
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