Invention Grant
- Patent Title: Integration of gate structures and spacers with air gaps
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Application No.: US15784445Application Date: 2017-10-16
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Publication No.: US10236358B1Publication Date: 2019-03-19
- Inventor: Suraj K. Patil , Jagar Singh
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Thompson Hine LLP
- Agent Anthony Canale
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L29/51 ; H01L29/78 ; H01L29/417 ; H01L29/66 ; H01L21/28 ; H01L29/08 ; H01L21/311 ; H01L21/02
Abstract:
Structures for a field-effect transistor and methods for forming a field-effect transistor. The structure includes a gate structure having a sidewall and a sidewall spacer arranged adjacent to the sidewall of the gate structure. The sidewall spacer includes an energy removal film material and one or more air gaps in the energy removal film material.
Information query
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