An object of the present invention is to suppress energization deterioration due to crystal defects in a semiconductor device including SiC-MOSFET. To solve this problem, a semiconductor device of the present invention includes: an n−-type epitaxial layer formed on a main surface of an n+-type SiC substrate; a p-type termination region that is annularly formed in the n−-type epitaxial layer outside an active region; and an n-type hole annihilation region annularly formed in the n−-type epitaxial layer outside the p-type termination region, apart from the p-type termination region. Then, the n-type hole annihilation region has a first end surface facing the p-type termination region, as well as a second end surface on the opposite side of the first end surface. When a depth of the n-type hole annihilation region is dTM, a depth of the p-type termination region is dNR, a thickness of the n−-type epitaxial layer is dEpi, a distance from the first end surface of the n-type hole annihilation region to the second end surface thereof is LNR, and a distance from the first end surface of the n-type hole annihilation region to the periphery of the semiconductor substrate is |XNR|, these variables have the following relationship: dNR≤dTM, (|XNR|+dNR)≥dEpi, 0