Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15252210Application Date: 2016-08-30
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Publication No.: US10236377B2Publication Date: 2019-03-19
- Inventor: Shunsuke Katoh , Yusuke Kawaguchi
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2016-048997 20160311
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/10 ; H01L29/417 ; H01L29/423 ; H01L29/66 ; H01L29/40
Abstract:
A semiconductor device includes a first conductivity type first semiconductor region, a second semiconductor region on the first semiconductor region, a third semiconductor region on the second semiconductor region, a first insulating portion extending inwardly of, and surrounded by, the first semiconductor region, a gate electrode extending inwardly of the first insulating portion and spaced from the second semiconductor region in a second direction that intersects a first direction extending from the first semiconductor region to the second semiconductor region, by the first insulating portion, and a first electrode including a portion spaced from the first semiconductor region in the second direction by the first insulating portion, and surrounded by the first insulating portion and the gate electrode.
Public/Granted literature
- US20170263768A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-09-14
Information query
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