- Patent Title: Vertical hetero- and homo-junction tunnel field-effect transistors
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Application No.: US15843766Application Date: 2017-12-15
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Publication No.: US10236386B2Publication Date: 2019-03-19
- Inventor: Wenjuan Zhu , Shang-Chun Lu , Mohamed Mohamed
- Applicant: The Board of Trustees of the University of Illinois
- Applicant Address: US IL Urbana
- Assignee: The Board of Trustees of the University of Illinois
- Current Assignee: The Board of Trustees of the University of Illinois
- Current Assignee Address: US IL Urbana
- Agency: Benesch, Friedlander, Coplan & Aronoff LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/00 ; H01L29/786 ; H01L29/24 ; H01L21/02 ; H01L29/15 ; H01L29/66 ; H01L29/267 ; H01L29/739
Abstract:
The present disclosure provides vertical hetero- and homo-junction tunnel FET (TFET) based on multi-layer black phosphorus (BP) and transition metal dichalcogenides.
Public/Granted literature
- US20180204953A1 Vertical Hetero- and Homo-Junction Tunnel Field-Effect Transistors Public/Granted day:2018-07-19
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