Invention Grant
- Patent Title: Semiconductor device and electronic device
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Application No.: US15262660Application Date: 2016-09-12
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Publication No.: US10236387B2Publication Date: 2019-03-19
- Inventor: Yutaka Shionoiri , Shuhei Nagatsuka , Hideki Uochi
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2015-185539 20150918; JP2015-187874 20150925
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12 ; H01L21/78 ; H01L21/48 ; H01L21/56 ; H01L23/544 ; H01L21/66 ; H01L23/495 ; H01L23/31 ; H01L27/32 ; H05B33/08
Abstract:
In a logic circuit including transistors with the same conductivity, a reduction in output voltage is prevented with use of at least three transistors and a capacitor. With use of an oxide semiconductor in a semiconductor layer of the transistor, a logic circuit with high output voltage and high withstand voltage is achieved. With use of the logic circuit, a semiconductor device with high output voltage and high withstand voltage is achieved.
Public/Granted literature
- US20170084754A1 SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE Public/Granted day:2017-03-23
Information query
IPC分类:
