A dual gate oxide thin-film transistor and manufacturing method for the same. The thin-film transistor comprises: a substrate; a bottom gate electrode formed on the substrate; a first gate insulation layer disposed on the bottom gate electrode; a semiconductor layer formed on the first gate insulation layer; a second gate insulation layer formed on the semiconductor layer; and a top gate electrode formed on the second gate insulation layer; wherein, the transistor further comprises a data line, the data line and the bottom gate electrode, or the data line and the top gate electrode are located at a same metal layer. Because the data line and the bottom gate (or the top gate) electrodes are located at a same metal layer, and through one photolithography for patterning to reduce the number of the mask, decrease the production cost. Besides, the stability and the response speed are increased.