Invention Grant
- Patent Title: Reducing dark current in germanium photodiodes by electrical over-stress
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Application No.: US15797692Application Date: 2017-10-30
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Publication No.: US10236407B2Publication Date: 2019-03-19
- Inventor: Barry P. Linder , Jason S. Orcutt
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L31/105 ; H01L21/66 ; H01L31/024 ; H01L31/028 ; G01R19/00 ; H01L31/0203
Abstract:
Systems for reducing dark current in a photodiode include a heater configured to heat a photodiode above room temperature. A reverse bias voltage source is configured to apply a reverse bias voltage to the heated photodiode to reduce a dark current generated by the photodiode. A control system is configured to trigger the reverse bias voltage source to increase the reverse bias voltage.
Public/Granted literature
- US20180053875A1 REDUCING DARK CURRENT IN GERMANIUM PHOTODIODES BY ELECTRICAL OVER-STRESS Public/Granted day:2018-02-22
Information query
IPC分类:
