Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US15934505Application Date: 2018-03-23
-
Publication No.: US10236868B2Publication Date: 2019-03-19
- Inventor: Koji Takayanagi
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC.
- Priority: JP2016-057403 20160322
- Main IPC: H03K3/356
- IPC: H03K3/356 ; H03K17/10 ; H03K19/003

Abstract:
A semiconductor device includes: a semiconductor chip including a level shift circuit to output a high amplitude signal from an input of a logical signal, the level shift circuit including a series coupling circuit coupled to a second power supply, a control circuit coupled to the series coupling circuit for controlling the series coupling circuit based on the logical signal, and a first potential conversion circuit coupled between the series coupling circuit and the control circuit and coupled to a first power supply. The series coupling circuit includes a plurality of first MOS transistors coupled in series between the second power supply and a reference power supply, and a plurality of second MOS transistors coupled in series between the second power supply and the reference power supply in series with the plurality of first MOS transistors.
Public/Granted literature
- US20180269860A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-09-20
Information query
IPC分类: