Implementations described herein generally relate to a method and apparatus for depositing material on a substrate. In one implementation, a processing chamber for processing a substrate includes a chamber body and a substrate support disposed within the chamber body and adapted to support the substrate thereon. The processing chamber includes a plurality of gas inlets positioned above the substrate support to direct a process gas above the substrate support. A movable diffuser is pivotally mounted adjacent the substrate support via a pivoting mount. The movable diffuser includes a deposition head having a plurality of inlet openings for directing process gas toward the substrate support and a plurality of exhaust openings for providing an exhaust to process gas disposed above the substrate support by the movable diffuser.