Invention Grant
- Patent Title: Semiconductor gas sensor and method of manufacturing the same
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Application No.: US15414125Application Date: 2017-01-24
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Publication No.: US10241067B2Publication Date: 2019-03-26
- Inventor: Han Choon Lee , Ye Eun Na , Joo Hyeon Lee
- Applicant: DONGBU HITEK CO., LTD.
- Applicant Address: KR Seoul
- Assignee: DB Hitek Co., Ltd
- Current Assignee: DB Hitek Co., Ltd
- Current Assignee Address: KR Seoul
- Agency: Patterson Thuente Pederson, P. A.
- Priority: KR1020160015541 20160211
- Main IPC: G01N27/12
- IPC: G01N27/12 ; H01L45/00

Abstract:
A semiconductor gas sensor includes a substrate having a cavity, a first insulation layer formed on the substrate, including an exposure hole formed at a position corresponding to the cavity and a peripheral portion of the cavity, a second insulation layer formed on the first insulation layer, covering the exposure hole, a heating electrode formed on the second insulation layer, being formed at a position corresponding to the cavity, a sensing electrode formed over the heating electrode, being electrically insulated from the heating electrode, a detection layer covering the sensing electrode, being capable of having a variable resistance when acting with a predetermined kind of gas, and a vent hole formed by penetrating the second insulation layer to communicate with the exposure hole, and the vent hole being capable of dissipating heat from the heating electrode in a upward direction with respect to the substrate. Thus, the exposed hole and the cavity may relieve sage of a membrane toward the cavity and may dissipate heat from the heating electrode swiftly and efficiently.
Public/Granted literature
- US20170234821A1 SEMICONDUCTOR GAS SENSOR AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2017-08-17
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