A die crack detector and method are provided. A first metal trace is formed over a substrate with the first metal trace configured to extend around a perimeter of a semiconductor die. A second metal trace is formed over the first metal trace with the second metal trace configured to overlap the first metal trace. A dielectric material is disposed between the first and second metal traces. A first detector terminal is coupled to the first metal trace and a second detector terminal coupled to the second metal trace. The detector terminals are configured to receive a predetermined voltage.