A semiconductor device according to an embodiment of the disclosure includes: a first substrate; a TFT element provided on the first substrate with a first interlayer insulating layer interposed therebetween, and including a semiconductor layer and a gate electrode that is provided on the semiconductor layer with a gate insulating layer interposed therebetween; and a second substrate disposed to face the first substrate. The gate electrode includes a first electroconductive film and a second electroconductive film that has a light-shielding property in order from side of the semiconductor layer. The second electroconductive film extends from a side face to a bottom face of each of a pair of openings that are provided to interpose the semiconductor layer.