Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14796674Application Date: 2015-07-10
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Publication No.: US10242928B2Publication Date: 2019-03-26
- Inventor: Yoichi Nogami
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2014-204754 20141003
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L23/00 ; H01L23/58
Abstract:
A semiconductor device includes: a semiconductor substrate having a main plane; a semiconductor element provided on the main plane of the semiconductor substrate; an electrode pad provided on the main plane of the semiconductor substrate and connected to the semiconductor element; a guard ring surrounding the semiconductor element and the electrode pad, and provided on the main plane of the semiconductor substrate; and an insulating film covering all region of a semiconductor of the main plane of the semiconductor substrate exposed inside the guard ring, wherein the insulating film is made of a water impermeable material.
Public/Granted literature
- US20160099193A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-04-07
Information query
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