Invention Grant
- Patent Title: Semiconductor device and method for manufacturing same
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Application No.: US15700402Application Date: 2017-09-11
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Publication No.: US10242993B2Publication Date: 2019-03-26
- Inventor: Daigo Ichinose
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2016-186180 20160923
- Main IPC: H01L27/1157
- IPC: H01L27/1157 ; H01L27/11556 ; H01L27/11565 ; H01L27/11575 ; H01L27/11582
Abstract:
A semiconductor device includes a stacked body and an insulating portion. The stacked body includes first to fourth electrode layers. The first electrode layer extends along a first direction. The second electrode layer is arranged with the first electrode layer in a second direction. The third electrode layer is provided between the first electrode layer and a word line. The fourth electrode layer is provided between the second electrode layer and the word line. The insulating portion includes first and second portions. The first portion extends along the first direction between the first electrode layer and the second electrode layer and between a portion of the third electrode layer and a portion of the fourth electrode layer. The second portion extends in the third direction between the third electrode layer and the fourth electrode layer, and through the word line.
Public/Granted literature
- US20180090507A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2018-03-29
Information query
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