Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15905932Application Date: 2018-02-27
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Publication No.: US10243038B1Publication Date: 2019-03-26
- Inventor: Katsuhisa Tanaka , Ryosuke Iijima , Shinya Kyogoku , Shinsuke Harada
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2017-228232 20171128
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/78 ; H01L29/739 ; H01L29/423 ; H01L29/40 ; H01L29/16 ; H01L21/04
Abstract:
According to one embodiment, a semiconductor device includes a first conductive portion, a semiconductor portion including silicon carbide, and a first insulating portion. The semiconductor portion includes first to fourth semiconductor regions. The first semiconductor region includes first and second partial regions. The third semiconductor region is provided between the second partial region and the second semiconductor region. The fourth semiconductor region is provided between the first conductive portion and the first partial region. The first insulating portion includes first to third portions. A portion of the first portion is positioned between the first conductive portion and the fourth semiconductor region. The second portion is positioned between the second semiconductor region and the portion of the first conductive portion and between the first conductive portion and the third semiconductor region. The third portion is provided between the first and second portions. The third portion has first and second surfaces.
Information query
IPC分类:
