Invention Grant
- Patent Title: FinFETs with high quality source/drain structures
-
Application No.: US15727287Application Date: 2017-10-06
-
Publication No.: US10243044B2Publication Date: 2019-03-26
- Inventor: Kangguo Cheng , Ali Khakifirooz , Alexander Reznicek , Charan V. V. S. Surisetty
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Steven J. Meyers
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/78 ; H01L29/161 ; H01L29/66 ; H01L21/18
Abstract:
A semiconductor structure is provided that includes a silicon germanium alloy fin located on a portion of a topmost surface of an insulator layer. A functional gate structure straddles a portion of the silicon germanium alloy fin and is located on other portions of the topmost surface of the insulator layer. A source structure is located on one side of the functional gate structure and a drain structure is located on another side of the functional gate structure. The source structure and the drain structure surround the other portions of the silicon germanium alloy fin and are located on a germanium graded silicon-containing region that is present at a footprint of the other portions of the silicon germanium alloy fin.
Public/Granted literature
- US20180033857A1 FINFETs WITH HIGH QUALITY SOURCE/DRAIN STRUCTURES Public/Granted day:2018-02-01
Information query
IPC分类:
