Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US15278179Application Date: 2016-09-28
-
Publication No.: US10243344B2Publication Date: 2019-03-26
- Inventor: Satoru Nate
- Applicant: Rohm Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Fish & Richardson P.C.
- Priority: JP2015-190702 20150929
- Main IPC: H02H3/093
- IPC: H02H3/093 ; H02H3/087 ; H02H7/12 ; H02H7/122 ; H02H9/02 ; H02M1/32 ; H02M3/155 ; H02M7/217

Abstract:
A semiconductor device includes an integration of a first external terminal to which a DC input voltage is input, a second external terminal to which a rectifying and smoothing circuit is externally connected, an output transistor connected between the first external terminal and the second external terminal, a control circuit arranged to turn on and off the output transistor so that a desired DC output voltage can be obtained from the rectifying and smoothing circuit, a current detection circuit arranged to generate a sense voltage corresponding to an on-current of the output transistor, and an overcurrent protection circuit arranged to monitor the sense voltage so as to perform an overcurrent protection operation. The overcurrent protection circuit performs a first overcurrent protection operation of a pulse-by-pulse method when detecting that the sense voltage exceeds a first threshold value voltage, and performs a second overcurrent protection operation of a timer latch method when detecting that the sense voltage continues to increase though the first overcurrent protection operation is being performed.
Public/Granted literature
- US20170093145A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-03-30
Information query