Invention Grant
- Patent Title: Complementary metal-oxide-semiconductor (CMOS) inverter circuit device
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Application No.: US15398318Application Date: 2017-01-04
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Publication No.: US10243558B2Publication Date: 2019-03-26
- Inventor: Beom Seon Ryu , Gyu Ho Lim , Tae Kyoung Kang
- Applicant: MagnaChip Semiconductor, Ltd.
- Applicant Address: KR Cheongju-si
- Assignee: MagnaChip Semiconductor, Ltd.
- Current Assignee: MagnaChip Semiconductor, Ltd.
- Current Assignee Address: KR Cheongju-si
- Agency: NSIP Law
- Priority: KR10-2013-0124890 20131018
- Main IPC: H03K3/00
- IPC: H03K3/00 ; H03K19/00 ; H03K19/003 ; H03K19/0948

Abstract:
There is provided a CMOS inverter circuit device. The CMOS inverter circuit device includes a delay circuit unit configured to generate different charge and discharge paths of each gate node of a PMOS transistor and an NMOS transistor respectively at the time that an input signal transitions between high and low levels. Therefore, the present examples minimize or erase generation of a short circuit current made at the time that the input signal transition. The examples may simplify circuit architecture, and may make a magnitude of a CMOS inverter circuit device smaller.
Public/Granted literature
- US20170117894A1 COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) INVERTER CIRCUIT DEVICE Public/Granted day:2017-04-27
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