Invention Grant
- Patent Title: CMP polishing agent, method for manufacturing thereof, and method for polishing substrate
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Application No.: US15303564Application Date: 2015-03-26
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Publication No.: US10246620B2Publication Date: 2019-04-02
- Inventor: Mitsuhito Takahashi
- Applicant: SHIN-ETSU CHEMICAL CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2014-097625 20140509
- International Application: PCT/JP2015/001729 WO 20150326
- International Announcement: WO2015/170436 WO 20151112
- Main IPC: C09K3/14
- IPC: C09K3/14 ; B24B7/22 ; C09G1/04 ; B24B37/04 ; C01F17/00 ; C09G1/02 ; H01L21/306 ; H01L21/3105 ; B24B37/00 ; B24B37/20 ; B24B37/10 ; H01L21/762
Abstract:
The present invention is a CMP polishing agent, including polishing particles, a protective film-forming agent, and water, wherein the protective film-forming agent is a copolymer of styrene and acrylonitrile, and an average molecular weight of the copolymer is 500 or more and 20000 or less. This provides a polishing agent which can polish an insulation film with few polishing scratches and has high polishing selectivity of an insulation film to a polishing stop film in a CMP step, a method for manufacturing the polishing agent, and a method for polishing a substrate by using the polishing agent.
Public/Granted literature
- US20170037290A1 CMP POLISHING AGENT, METHOD FOR MANUFACTURING THEREOF, AND METHOD FOR POLISHING SUBSTRATE Public/Granted day:2017-02-09
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