Invention Grant
- Patent Title: Layer-forming device and layer-forming method
-
Application No.: US14770782Application Date: 2014-02-21
-
Publication No.: US10246776B2Publication Date: 2019-04-02
- Inventor: Yasunari Mori , Naomasa Miyatake , Nozomu Hattori
- Applicant: Mitsui Engineering & Shipbuilding Co., Ltd.
- Applicant Address: JP Tokyo
- Assignee: MITSUI E&S MACHINERY CO., LTD
- Current Assignee: MITSUI E&S MACHINERY CO., LTD
- Current Assignee Address: JP Tokyo
- Agency: Global IP Counselors, LLP
- Priority: JP2013-039726 20130228
- International Application: PCT/JP2014/054176 WO 20140221
- International Announcement: WO2014/132891 WO 20140904
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23F1/00 ; H01L21/306 ; C23C16/455 ; H01J37/32 ; C23C16/54

Abstract:
A layer-forming device that enables highly efficient layer formation and has a simplified configuration includes: a substrate feeding mechanism; a plasma-generating electrode; a space-partitioning wall; and a plurality of injectors. The plasma-generating electrode faces towards a feeding pathway of the substrate, and generates plasma using a reactive gas upon a supply of electric power. The space-partitioning wall is disposed between the feeding pathway and the plasma-generating electrode. A plurality of slit-shaped through-holes, through which radicals, ions generated from the plasma, or a portion of the plasma can pass, are formed at predetermined intervals in the space-partitioning wall. The plurality of injectors are sandwiched between the space-partitioning wall and the feeding pathway, such that each of the injectors is sandwiched between two adjacent through-holes from both sides of the two through-holes in the feeding direction, and the layer-forming gas is supplied toward the substrate through a layer-forming gas supply port.
Public/Granted literature
- US20160002785A1 LAYER-FORMING DEVICE AND LAYER-FORMING METHOD Public/Granted day:2016-01-07
Information query
IPC分类: