Invention Grant
- Patent Title: Semiconductor device, mechanical quantity measuring device, and semiconductor device fabricating method
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Application No.: US15742809Application Date: 2016-06-30
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Publication No.: US10247630B2Publication Date: 2019-04-02
- Inventor: Hanae Shimokawa , Shosaku Ishihara , Atsuo Soma , Junji Onozuka , Hiroshi Onuki , Daisuke Terada , Mizuki Shibata
- Applicant: HITACHI AUTOMOTIVE SYSTEMS, LTD.
- Applicant Address: JP Ibaraki
- Assignee: HITACHI AUTOMOTIVE SYSTEMS, LTD.
- Current Assignee: HITACHI AUTOMOTIVE SYSTEMS, LTD.
- Current Assignee Address: JP Ibaraki
- Agency: Volpe and Koenig, P.C.
- Priority: JP2015-135899 20150707
- International Application: PCT/JP2016/069521 WO 20160630
- International Announcement: WO2017/006840 WO 20170112
- Main IPC: H01C8/02
- IPC: H01C8/02 ; G01L9/00 ; G01B7/16 ; H01L29/84 ; H01L23/00
Abstract:
A semiconductor device includes a metal body; a bonding layer placed on the metal body; and a semiconductor chip placed on the bonding layer. The bonding layer includes a filler-containing first layer formed between the metal body and the semiconductor chip and a second layer bonded to the first layer and the semiconductor chip. The second layer has a thermal expansion coefficient higher than that of the first layer.
Public/Granted literature
- US20180202883A1 SEMICONDUCTOR DEVICE, MECHANICAL QUANTITY MEASURING DEVICE, AND SEMICONDUCTOR DEVICE FABRICATING METHOD Public/Granted day:2018-07-19
Information query
