Invention Grant
- Patent Title: Resistive element
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Application No.: US15078402Application Date: 2016-03-23
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Publication No.: US10247788B2Publication Date: 2019-04-02
- Inventor: Udo Ausserlechner
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: G01R33/07
- IPC: G01R33/07 ; G01P15/12 ; G01R33/00

Abstract:
A resistive element includes a resistive region in a semiconductor substrate, a first contact structure and a second contact structure. The semiconductor substrate includes a first main surface area. The resistive region extends in a lateral direction parallel to the main surface area and in a vertical direction perpendicular to the main surface area, and includes a first piezo-resistive coefficient for a current flow in the lateral direction and a second piezo-resistive coefficient for a current flow in the vertical direction. The first contact structure contacts a portion of a first face of the resistive region and the second contact structure contacts a portion of a second face of the resistive region. The resistive element generates a current flow distribution within the resistive region having a lateral component and a vertical component that results in a piezo-resistive coefficient of the resistive element.
Public/Granted literature
- US20160245880A1 RESISTIVE ELEMENT Public/Granted day:2016-08-25
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