The invention relates to a method for making a micro- or nano-scale patterned layer of material by photolitography, comprising steps of: positioning a photomask between a light source and a layer of light sensitive material, said mask comprising a support and a layer of micro- or nano-light focusing elements fixed to the support, activating the light source so that the light source emits light radiations through the mask towards a surface of the layer of light sensitive material, developing the layer of light sensitive material so as to obtain the micro- or nano-scale patterned layer of material, wherein, during exposure of the layer of light sensitive material to light radiations, the photomask is positioned relative to the light sensitive layer so that the distance between the surface of the light sensitive layer and the layer of micro- or nano-light focusing elements is greater than a back focal length of the micro- or nano-light focusing elements.