Invention Grant
- Patent Title: Semiconductor device including clock generating circuit and channel management circuit
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Application No.: US15415041Application Date: 2017-01-25
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Publication No.: US10248155B2Publication Date: 2019-04-02
- Inventor: Se Hun Kim , Ah Chan Kim , Youn Sik Choi , Jae Gon Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2017-0007002 20170116; KR10-2017-0010945 20170124
- Main IPC: G06F1/00
- IPC: G06F1/00 ; H04L5/00 ; G06F1/06 ; G06F1/3237

Abstract:
A semiconductor device includes a first clock generating circuit including a first control circuit and a first clock gating circuit, a first channel management circuit which communicates with the first clock generating circuit according to a full handshake method, a second clock generating circuit including a second control circuit and a second clock gating circuit, and a second channel management circuit which communicates with the second clock generating circuit according to the full handshake method. The first clock gating circuit outputs a first clock, and the second clock gating circuit outputs a second clock different from the first clock.
Public/Granted literature
- US20170212549A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-07-27
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