Invention Grant
- Patent Title: Correcting an error in a memory device
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Application No.: US14829829Application Date: 2015-08-19
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Publication No.: US10248502B2Publication Date: 2019-04-02
- Inventor: Diyanesh B. Chinnakkonda Vidyapoornachary , Vijay Anand Mathiyalagan , Gary A. Tressler
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Patterson & Sheridan, LLP
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G11C29/52 ; G06F3/06 ; H03M13/35 ; G11C7/04 ; G11C29/04

Abstract:
In an example, a method of correcting an error in a memory device includes determining a temperature profile associated with a region of a memory device. The temperature profile is one of a plurality of temperature profiles each associated with a respective region of a plurality of regions of the memory device. The method includes determining a correction capability based on the thermal profile. The method also includes correcting an error in the memory region using the determined correction capability.
Public/Granted literature
- US20170004040A1 CORRECTING AN ERROR IN A MEMORY DEVICE Public/Granted day:2017-01-05
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