- Patent Title: Method for using heated substrates for process chemistry control
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Application No.: US15099031Application Date: 2016-04-14
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Publication No.: US10249498B2Publication Date: 2019-04-02
- Inventor: Peter L. G. Ventzek , Hirokazu Ueda
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Main IPC: H01L21/223
- IPC: H01L21/223 ; H01L21/02 ; H01L21/324
Abstract:
A method of controlling doping of a substrate, the method comprising: providing the substrate in a process chamber of a doping system; performing a doping process to impart a target dose on a surface of the substrate using a abruptness depth control technique; and controlling selected operating variables of plasma doping in order to meet doping objectives.
Public/Granted literature
- US20160372327A1 Method for Using Heated Substrates for Process Chemistry Control Public/Granted day:2016-12-22
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