Invention Grant
- Patent Title: Light-irradiation heat treatment apparatus
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Application No.: US15420134Application Date: 2017-01-31
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Publication No.: US10249519B2Publication Date: 2019-04-02
- Inventor: Makoto Abe
- Applicant: SCREEN Holdings Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: SCREEN Holdings Co., Ltd.
- Current Assignee: SCREEN Holdings Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Ostrolenk Faber LLP
- Priority: JP2016-032733 20160224
- Main IPC: F26B3/30
- IPC: F26B3/30 ; F26B19/00 ; H01L21/67 ; H05B3/00

Abstract:
A semiconductor wafer held by a holder within a chamber is irradiated and heated with halogen light emitted from multiple halogen lamps. A cylindrical louver made of opaque quartz and a light-shielding member of a ring shape having a cut-out portion are provided between the halogen lamps and the semiconductor wafer. When the semiconductor wafer is heated with the light emitted from the halogen lamps, a shadow region will appear in the semiconductor wafer as a result of the louver blocking off the emitted light. However, in the presence of the cut-out portion of the light-shielding member, the light emitted from the halogen lamps will reach the shadow region through the cut-out portion. This configuration allows the shadow region to be heated in the same manner as the other regions, and accordingly will help make uniform the in-plane temperature distribution of the semiconductor wafer during light irradiation heating.
Public/Granted literature
- US20170243771A1 LIGHT-IRRADIATION HEAT TREATMENT APPARATUS Public/Granted day:2017-08-24
Information query
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