Invention Grant
- Patent Title: Forming a hybrid channel nanosheet semiconductor structure
-
Application No.: US16019916Application Date: 2018-06-27
-
Publication No.: US10249541B2Publication Date: 2019-04-02
- Inventor: Kangguo Cheng , Peng Xu
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Ryan, Mason & Lewis, LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L27/092 ; H01L29/66 ; H01L21/02 ; H01L21/306 ; H01L29/10 ; H01L21/8258 ; H01L21/28 ; H01L21/321 ; H01L29/06 ; H01L29/423 ; H01L29/49 ; H01L29/786 ; H01L21/308
Abstract:
A method for fabricating a nanosheet semiconductor structure includes forming a first nanosheet field effect transistor (FET) structure having a first inner spacer comprised of a first material and a second nanosheet FET structure having second inner spacer comprised of a second material. The first material is different than the second material. The first nanosheet FET structure is formed by creating a first inner spacer formation within a first silicon germanium (SiGe) channel, wherein the first SiGe channel is comprised in a first channel region of a first FET region. The second nanosheet FET structure is formed by creating a second inner spacer formation within a second SiGe channel, wherein the second SiGe channel is comprised in a second channel region of a second FET region.
Public/Granted literature
- US20180323111A1 FORMING A HYBRID CHANNEL NANOSHEET SEMICONDUCTOR STRUCTURE Public/Granted day:2018-11-08
Information query
IPC分类:
