- Patent Title: Method for processing substrate including forming a film on a silicon-containing surface of the substrate to prevent resist from extruding from the substrate during an imprinting process
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Application No.: US15066667Application Date: 2016-03-10
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Publication No.: US10249545B2Publication Date: 2019-04-02
- Inventor: Nobuyoshi Sato
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2015-154422 20150804
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/027 ; H01L21/66
Abstract:
A method for processing a substrate exposes a silicon-containing surface at a circumferential edge portion of a first main surface of a substrate to be processed, performs surface processing to the silicon-containing surface to increase a contact angle of the silicon-containing surface with respect to a resist material, comparing with the contact angle before the surface processing is performed, supplies the resist material onto the substrate to be processed after the surface processing, and transfers a template pattern to the resist material.
Public/Granted literature
- US20170040231A1 METHOD FOR PROCESSING SUBSTRATE Public/Granted day:2017-02-09
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